Analytical Model of Thin Film Fully Depleted Buried N-Channel SOI MOSFET Based on Silicon Direct Bonding Technology

Chen Junnlng; Tong Qinyi

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Analytical Model of Thin Film Fully Depleted Buried N-Channel SOI MOSFET Based on Silicon Direct Bonding Technology

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- Analytical Model of Thin Film Fully Depleted Buried N-Channel SOI MOSFET Based on Silicon Direct Bonding Technology
- Acta Electronica Sinica Issue 8, Pages: 9-16(1993)
- 作者机构：
  
  1. 东南大学微电子中心
  2. 东南大学微电子中心南京210018
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1993
- 稿件说明：
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[1]陈军宁,童勤义.SOI/SDB超薄膜全耗尽隐埋n沟MOSFET的解析模型[J].电子学报,1993(08):9-16.

Chen Junnlng, Tong Qinyi. Analytical Model of Thin Film Fully Depleted Buried N-Channel SOI MOSFET Based on Silicon Direct Bonding Technology[J]. Acta Electronica Sinica, 1993, (8): 9-16.
[1]陈军宁,童勤义.SOI/SDB超薄膜全耗尽隐埋n沟MOSFET的解析模型[J].电子学报,1993(08):9-16. DOI：

Chen Junnlng, Tong Qinyi. Analytical Model of Thin Film Fully Depleted Buried N-Channel SOI MOSFET Based on Silicon Direct Bonding Technology[J]. Acta Electronica Sinica, 1993, (8): 9-16. DOI：

摘要

本文给出了基于SDB材料的无PN结超薄膜全耗尽隐埋n沟型MOSFET的较明确的物理模型

详细分析了它的导电机理

给出了解析表达式.并将本模型的计算结果与实验结果进行了比较

同时进行了一些讨论.

Abstract

The definite physical model has been developed for the thin-film fully depleted buried n-channel SOI MOSFET without PN junction based on silicon direct bonding material. Its condution mechanism has been analized in detail

and the analytical expressions have been given. Finally

the analytical results based on this model have been compared with the experimental results

and the disscussion has been given.

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