A New Approach to the Study of the Bistability from Semiconductor Lasers-Point Tracing Method

Chen Jianguo

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A New Approach to the Study of the Bistability from Semiconductor Lasers-Point Tracing Method

更新时间：2025-12-08

- A New Approach to the Study of the Bistability from Semiconductor Lasers-Point Tracing Method
- Acta Electronica Sinica Issue 2, Pages: 1-5(1993)
- 作者机构：
  
  四川大学光电系,成都,610064
- 作者简介：
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- Published：1993
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[1]陈建国.研究双稳半导体激光器的新方法——逐点跟踪法[J].电子学报,1993(02):1-5.

Chen Jianguo. A New Approach to the Study of the Bistability from Semiconductor Lasers-Point Tracing Method[J]. Acta Electronica Sinica, 1993, (2): 1-5.
[1]陈建国.研究双稳半导体激光器的新方法——逐点跟踪法[J].电子学报,1993(02):1-5. DOI：

Chen Jianguo. A New Approach to the Study of the Bistability from Semiconductor Lasers-Point Tracing Method[J]. Acta Electronica Sinica, 1993, (2): 1-5. DOI：

摘要

逐点计算非均匀泵浦半导体激光器输出双稳环上四个关键点处的运行参量

对吸收型双稳半导体激光器进行了研究。该法不但可以给出双稳激光器“启动”和“下跳“点的阈值电流和相应的输出功率

而且还可以给出用这些值来表示的增益截面的解析表达式

这将使得实验上可以简单地由测量到的双稳环的宽度和高度来确定难于测定的增益截面。

Abstract

By tracing the crucial points defining the hysteresis loop of the inhomogeneously pumped semiconductor lasers

the absorptive optical bistablity has been studied. Analytical expressions for the output power and the threshold current at the switch-on and off have been derived

and the relationship between the cross-sections of the media with the measured power and threshold current has been established

thus the messurements of these cross-sections are simplifed greatly.

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