High Temperature Electrical Characteristics Analysis of CMOS Digital Integrated Circuits

Ke Daoming

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High Temperature Electrical Characteristics Analysis of CMOS Digital Integrated Circuits

更新时间：2025-12-08

- High Temperature Electrical Characteristics Analysis of CMOS Digital Integrated Circuits
- Acta Electronica Sinica Issue 11, Pages: 31-38(1993)
- 作者机构：
  
  1.   中国科技大学物理系
  2.   东南大学微电子中心
  3.   东南大学微电子中心合肥 230026
  4.   南京 210018
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1993
- 稿件说明：
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[1]柯导明,童勤义,冯耀兰.CMOS数字集成电路的高温电学性能分析[J].电子学报,1993(11):31-38+30.

Ke Daoming. High Temperature Electrical Characteristics Analysis of CMOS Digital Integrated Circuits[J]. Acta Electronica Sinica, 1993, (11): 31-38.
[1]柯导明,童勤义,冯耀兰.CMOS数字集成电路的高温电学性能分析[J].电子学报,1993(11):31-38+30. DOI：

Ke Daoming. High Temperature Electrical Characteristics Analysis of CMOS Digital Integrated Circuits[J]. Acta Electronica Sinica, 1993, (11): 31-38. DOI：

摘要

本文给出了CMOS倒相器的高温等效电路

分析了它的高温直流传输特性和瞬态特性。文章还讨论了CMOS静态数字集成电路高温电学特性的分析方法。本文提出的CMOS数字集成电路的高温电学特性模型和实验结果相接近。

Abstract

This paper gives high temperature equivalent circuit of CMOS inverters.The high temperature DC transfer characteristics and transient performance of CMOS inverters have been analysed.It has discussed the analysis methods of high temperature electrical characteristics of static CMOS digital integrated circuits.The experimental results are in basic agreement with models which the paper has given.

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Related Institution

1 Shanghai Insitute of Metallurgy,Chinese Academy of Sciences

2 Dept.of Electronic and Electrical Engineering,University of Sheffield

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