Parameter Extraction of Large Signal Circuit Model of Semiconductor Laser

任新根; 徐国萍; 董天临

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Parameter Extraction of Large Signal Circuit Model of Semiconductor Laser

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- Parameter Extraction of Large Signal Circuit Model of Semiconductor Laser
- Acta Electronica Sinica Issue 2, (1994)
- 作者机构：
  
  武昌华中理工大学电子与信息工程系
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN248.4
- Published：1994
- 稿件说明：
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[1]任新根,徐国萍,董天临.半导体激光器大信号等效电路模型的参数提取[J].电子学报,1994(02):27-34.

任新根, 徐国萍, 董天临. Parameter Extraction of Large Signal Circuit Model of Semiconductor Laser[J]. Acta Electronica Sinica, 1994, (2).
[1]任新根,徐国萍,董天临.半导体激光器大信号等效电路模型的参数提取[J].电子学报,1994(02):27-34. DOI：

任新根, 徐国萍, 董天临. Parameter Extraction of Large Signal Circuit Model of Semiconductor Laser[J]. Acta Electronica Sinica, 1994, (2). DOI：

摘要

本文提出了一种由半导体激光器（ＬＤ）的外特性，如端口电特性和小信号频率响应，确定其大信号等效电路模型参数的新方法。并对一个ＩｎＧａＡｓＰ脊形波导ＬＤ和一个隐埋异质结ＬＤ进行了参数提取。这种方法，不需要了解ＬＤ的内部特性，分析的结果与已报道的理论、实验值一致。

Abstract

A new method which extracts parameters of large signal circuit model for laser Diode（LD） from its external performances

such as terminal electrical Characteristics and small signal frequency response

is presented and used in an InGaAsP ridge waveguild LD and a buried heterostructure laser in this paper.No knowledge of internal data of LD is needed and the results are shown to be consistent with reported theoretical and experimental data.

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