Measurement and Extraction for Parameters f<sub>L</sub> and γ of Noise in Bipolar Transistors

Luo Tao

您当前的位置：

首页 >

文章列表页 >

Measurement and Extraction for Parameters f_L and γ of Noise in Bipolar Transistors

更新时间：2025-12-08

- Measurement and Extraction for Parameters f_L and γ of Noise in Bipolar Transistors
- Acta Electronica Sinica Issue 11, Pages: 87-90(1993)
- 作者机构：
  
  1.   东南大学无线电系
  2.   吉林工业大学电子系南京 210018
  3.   长春 130025
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1993
- 稿件说明：
移动端阅览
[1]罗涛,戴逸松.双极晶体管1/f噪声参数f_L和γ的测量提取[J].电子学报,1993(11):87-90.

Luo Tao. Measurement and Extraction for Parameters f_L and γ of Noise in Bipolar Transistors[J]. Acta Electronica Sinica, 1993, (11): 87-90.
[1]罗涛,戴逸松.双极晶体管1/f噪声参数f_L和γ的测量提取[J].电子学报,1993(11):87-90. DOI：

Luo Tao. Measurement and Extraction for Parameters f_L and γ of Noise in Bipolar Transistors[J]. Acta Electronica Sinica, 1993, (11): 87-90. DOI：

摘要

双极晶体管在低频段的噪声主要成分是1/f噪声

其参数f

和γ的获取目前尚很困难。本文给出了这两个参数的测量提取方法

其基本思想是基于噪声电压谱测量和最小二乘曲线拟合获得。最后给出了测量提取的实例与结果。

Abstract

Main part of low-frequency noise in bipolar transistor is the 1/f noise

and its important parameters fL and y are difficult to obtain.In this paper

the method of measurement and extraction for 1/f noise parameters fL and y of bipolar transistors is presented.It’s based on the low-frequency noise voltage spectra measurement and applying weighed least square method.The examples of bipolar transistor 3DX7 are also given.

关键词

Keywords

references

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

No data

Related Author

No data

Related Institution

No data

⁰

Measurement and Extraction for Parameters fL and γ of Noise in Bipolar Transistors

DOI：

摘要

Abstract

关键词

Keywords

references

Measurement and Extraction for Parameters f_L and γ of Noise in Bipolar Transistors