A Model of Generation Width for Direct Calculation of Generation Lifetime

Zhang Xiumiao; Ding Koubao

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A Model of Generation Width for Direct Calculation of Generation Lifetime

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- A Model of Generation Width for Direct Calculation of Generation Lifetime
- Acta Electronica Sinica Issue 5, Pages: 43-46(1993)
- 作者机构：
  
  1. 杭州大学电子工程系
  2. 杭州大学电子工程系杭州 310028
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1993
- 稿件说明：
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[1]张秀淼,丁扣宝.一种可用于直接计算产生寿命的产生区宽度模型[J].电子学报,1993(05):43-46.

Zhang Xiumiao, Ding Koubao. A Model of Generation Width for Direct Calculation of Generation Lifetime[J]. Acta Electronica Sinica, 1993, (5): 43-46.
[1]张秀淼,丁扣宝.一种可用于直接计算产生寿命的产生区宽度模型[J].电子学报,1993(05):43-46. DOI：

Zhang Xiumiao, Ding Koubao. A Model of Generation Width for Direct Calculation of Generation Lifetime[J]. Acta Electronica Sinica, 1993, (5): 43-46. DOI：

摘要

本文在分析已有的深耗尽态下半导体表面产生区宽度模型的基础上

提出了一个可用于由MOS结构的电容时间瞬态特性直接计算产生寿命的新模型。该新模型可以看作是Rabbani Rabbani模型的一种简化

但同时又可看作是对Zerbst模型的一个改进。实验数据的分析表明

用该模型得到的产生寿命值与Rabbani模型的结果基本一致。

Abstract

On the basis of analyzing previous models of generation width

a new model of generation width is presented

which may be used to directly calculate generation lifetime from capacitance-time transient characteristics of a MOS structure. This model can be regarded as a simplicity for Rabbani model

and meantime it can be considered as an improvement on Zerbst model. The analyses of experimental data show that the generation lifetime extracted by using the new model is consistent with that by using Rabbani model.

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Related Institution

Lab of Artificial Neural Networks,Institute of Semiconductors,CAS

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Lab of Artificial Neural NetworksInstitute of SemiconductorsCASBeijing 100083China

School of InformationZhejiang University of TechnologyHangzhouZhejiang 310014China

Dept. of Electronic Engineering,Hangzhou University

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