Realization of High-Q SC Notch Networks

Zhimin Yang; Zhuguo Yuan

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Realization of High-Q SC Notch Networks

更新时间：2025-12-08

- Realization of High-Q SC Notch Networks
- Acta Electronica Sinica Issue 8, Pages: 101-103(1993)
- 作者机构：
  
  1. 西北师范大学
  2. 西北师范大学兰州730070
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1993
- 稿件说明：
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[1]杨志民,袁助国.开关电容高Q陷波电路的实现[J].电子学报,1993(08):101-103+81.

Zhimin Yang, Zhuguo Yuan. Realization of High-Q SC Notch Networks[J]. Acta Electronica Sinica, 1993, (8): 101-103.
[1]杨志民,袁助国.开关电容高Q陷波电路的实现[J].电子学报,1993(08):101-103+81. DOI：

Zhimin Yang, Zhuguo Yuan. Realization of High-Q SC Notch Networks[J]. Acta Electronica Sinica, 1993, (8): 101-103. DOI：

摘要

本文从理论和设计两方面说明开关电容高Q陷波电路也可以通过Q倍增结构实现。采用这种结构还可以减小电路的电容比和总的电容值

从而减小制造芯片时的面积.

Abstract

Second-order high-Q active RC notch networks can be realized by using the Q-multiplier structure[1]. It is shown from the theory and design that the structure can also be used in SC notch networks to decrease the capacitor ratio and capacitor area of the circuit.

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