The General Expressions on AFE, Ge and K of PETs and the Classification of PETs

Jiang Xiang liu

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The General Expressions on AFE, Ge and K of PETs and the Classification of PETs

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- The General Expressions on AFE, Ge and K of PETs and the Classification of PETs
- Acta Electronica Sinica Issue 2, Pages: 14-21(1993)
- 作者机构：
  
  1.   北京市科学技术研究院
  2.   天津大学电子工程系
  3.   天津大学电子工程系北京 100044
  4.   天津 300072
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1993
- 稿件说明：
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[1]蒋翔六,郭维廉,张咏梅.多晶硅发射极晶体管h_(FE)、G_e、和K的普遍表达式及其分类[J].电子学报,1993(02):14-21.

Jiang Xiang liu. The General Expressions on AFE, Ge and K of PETs and the Classification of PETs[J]. Acta Electronica Sinica, 1993, (2): 14-21.
[1]蒋翔六,郭维廉,张咏梅.多晶硅发射极晶体管h_(FE)、G_e、和K的普遍表达式及其分类[J].电子学报,1993(02):14-21. DOI：

Jiang Xiang liu. The General Expressions on AFE, Ge and K of PETs and the Classification of PETs[J]. Acta Electronica Sinica, 1993, (2): 14-21. DOI：

摘要

本文综合考虑了影响多晶硅发射极晶体管（PET）电流增益的多种因素

针对最全面的器件结构推导出PET的共发射极直流电流增益h

E发射极Gummel数G

和电流增益的增强因子k解析形式的普遍表达式

覆盖了PET的多种结构。并以此对PET从器件结构上进行了科学地分类。此普遍表达式也包含了Ning和Graaff的理论结果。

Abstract

In this paper

The general expressions on common emitter DC Current gain hFE

emitter Gummel number Ge and current gain enhancement factor K of polysilicon emitter transistor （PET） have been derived in the analytical forms for a complete structure of PET by considering various factors which affect the current gain of PETs. The various device structure of PETs can be unified in these general expressions

and according to these expressions

PETs with the different device structure are classified scientifically. These general expressions include Ning’s and Graaff’s theoretical results.

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Related Author

魏同立

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Related Institution

Microelectronics Center of Southeast University

Dept.of Electronic Eng.,Tianjin University,Tianjin 300072)Jiang Xiangliu

北京市科学技术研究院

北京大学微电子学研究所

天津大学电子工程系北京市科学技术研究院北京大学微电子学研究所

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