Research Progress on SiGe-Base HBT

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- Research Progress on SiGe-Base HBT
- Acta Electronica Sinica Issue 8, Pages: 67-73(1993)
- 作者机构：
  
  复旦大学微电子学研究所,上海,200433
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1993
- 稿件说明：
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[1]阮刚.硅锗基区异质结双极型晶体管的研究进展[J].电子学报,1993(08):67-73+54.

Ruan Gang. Research Progress on SiGe-Base HBT[J]. Acta Electronica Sinica, 1993, (8): 67-73.
[1]阮刚.硅锗基区异质结双极型晶体管的研究进展[J].电子学报,1993(08):67-73+54. DOI：

Ruan Gang. Research Progress on SiGe-Base HBT[J]. Acta Electronica Sinica, 1993, (8): 67-73. DOI：

本文综述了SiGe-HBT工艺及性能研究的最新进展

提出了若干重要的研究课题.

In this paper

the recent research progress on process and performances of SiGe-HBT are reviewed as well as some significant research projects are suggested.

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