Rapid Thermal Processina Technoloay for ULSI

Tsien Pei-Hsin; Hou Dongyan; Lin Huiwang; Xu Li

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Rapid Thermal Processina Technoloay for ULSI

更新时间：2025-12-08

- Rapid Thermal Processina Technoloay for ULSI
- Acta Electronica Sinica Issue 11, Pages: 1-11(1992)
- 作者机构：
  
  1. 清华大学微电子学研究所
  2. 清华大学微电子学研究所北京100084
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1992
- 稿件说明：
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[1]钱佩信,侯东彦,林惠旺,徐立.超大规模集成电路快速热处理技术[J].电子学报,1992(11):1-11.

Tsien Pei-Hsin, Hou Dongyan, Lin Huiwang, et al. Rapid Thermal Processina Technoloay for ULSI[J]. Acta Electronica Sinica, 1992, (11): 1-11.
[1]钱佩信,侯东彦,林惠旺,徐立.超大规模集成电路快速热处理技术[J].电子学报,1992(11):1-11. DOI：

Tsien Pei-Hsin, Hou Dongyan, Lin Huiwang, et al. Rapid Thermal Processina Technoloay for ULSI[J]. Acta Electronica Sinica, 1992, (11): 1-11. DOI：

摘要

本文介绍了快速热处理技术的研究成果.包括:RHT设备

高剂量注入硅的RTA机理与最佳RTA条件选择

以及浅PN结制造

硅化物形成

BPSG回流和薄氧化层的快速氮化等RTP技术.

Abstract

The RHT equipment

which was invented for RTP

can be applied to various RTP processes with satisfactory results. The mechanisms and optimal parameters of rapid thermal annealing of high dose implanted silicon

fabrication of shallow PN junctions

formation of silicide

reflow of BPSG and RTN of ultrathin oxide films have been discussed from a comprehensive point of view.

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