The Study of Rare Earth Er Doped GaAs by LPE

Shi Yihe; Li Yunyi; Li Shuangxi; Ding Moyuan

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The Study of Rare Earth Er Doped GaAs by LPE

更新时间：2025-12-08

- The Study of Rare Earth Er Doped GaAs by LPE
- Acta Electronica Sinica Issue 2, Pages: 101-102(1993)
- 作者机构：
  
  1.   北京有色金属研究总院
  2.   北京大学
  3.   深圳激光光学系统有限公司北京 100088
  4.   北京 100871
  5.   深圳 518029
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1993
- 稿件说明：
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[1]施益和,李韻仪,李双喜,丁墨元,周济,袁佑荣.LPE-GaAs掺Er的研究[J].电子学报,1993(02):101-102.

Shi Yihe, Li Yunyi, Li Shuangxi, et al. The Study of Rare Earth Er Doped GaAs by LPE[J]. Acta Electronica Sinica, 1993, (2): 101-102.
[1]施益和,李韻仪,李双喜,丁墨元,周济,袁佑荣.LPE-GaAs掺Er的研究[J].电子学报,1993(02):101-102. DOI：

Shi Yihe, Li Yunyi, Li Shuangxi, et al. The Study of Rare Earth Er Doped GaAs by LPE[J]. Acta Electronica Sinica, 1993, (2): 101-102. DOI：

摘要

本文采用液相外延（LPE）法研究在GaAs中掺鼯土元素Er的外延生长

并对外延层的质量及光荧光等测量结果进行讨论。

Abstract

In this paper

The epitaxial growth of GaAs crystal doped with Er by LPE has been studied. The quality of the epi-layers and the properties of photoluminescence （PL） are discussed.

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The Study of Rare Earth Er Doped GaAs by LPE

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