A Study on Overlayer-Substrate System Cs on W（001）:Work Function,Energy Band Surface States

Chen Lujun; Luo Enze

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A Study on Overlayer-Substrate System Cs on W（001）:Work Function,Energy Band Surface States

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- A Study on Overlayer-Substrate System Cs on W（001）:Work Function,Energy Band Surface States
- Acta Electronica Sinica Issue 9, Pages: 6-11(1992)
- 作者机构：
  
  1.   西安电子科技大学
  2.   北京真空电子器件研究所西安710071
  3.   北京100016
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1992
- 稿件说明：
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[1]陈陆君,罗恩泽,王宁.Cs/W吸附过程中功函数、能带和表面态及其变化关系[J].电子学报,1992(09):6-11.

Chen Lujun, Luo Enze. A Study on Overlayer-Substrate System Cs on W（001）:Work Function,Energy Band Surface States[J]. Acta Electronica Sinica, 1992, (9): 6-11.
[1]陈陆君,罗恩泽,王宁.Cs/W吸附过程中功函数、能带和表面态及其变化关系[J].电子学报,1992(09):6-11. DOI：

Chen Lujun, Luo Enze. A Study on Overlayer-Substrate System Cs on W（001）:Work Function,Energy Band Surface States[J]. Acta Electronica Sinica, 1992, (9): 6-11. DOI：

摘要

本文利用适应于Jellium/slab模型的薄膜LAPW基函数的多能量函数与微分并用的描述方法

计算了具有三层slab的Cs-W吸附系统的功函数

能带和表面态及其随吸附度的变化

分析了它们的变化原因及其间关系

从而为吸附过程中所发生的量子过程提供了一幅比较清晰的图景.

Abstract

With a set of improved basis function of Film-LAPW method in vacuum-jellium region suitable for jellium/slab model

the work function

energy bands and density of surface states of W（001） surface covered with Cs overlayer are calculated with three layers of W slab. The results and the relations among those quantities are analysed

thereby giving relatively clear quantum pictures in this process.

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