The Study of Integrated Type Full Color Sensor with a-SiC/a-Si PIN Heterojunction

Xu Zhongyang; Wang Changan; Zhou Xuemei; Zou Xuecheng and Zhao Bofang

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The Study of Integrated Type Full Color Sensor with a-SiC/a-Si PIN Heterojunction

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- The Study of Integrated Type Full Color Sensor with a-SiC/a-Si PIN Heterojunction
- Acta Electronica Sinica Issue 5, Pages: 47-52(1992)
- 作者机构：
  
  1. 华中理工大学固体电子学系
  2. 华中理工大学固体电子学系武汉 430074
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1992
- 稿件说明：
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[1]徐重阳,王长安,周雪梅,邹雪城,赵伯芳.α-SiC/α-Si PIN异质结集成型全色色敏元件的研究[J].电子学报,1992(05):47-52.

Xu Zhongyang, Wang Changan, Zhou Xuemei, et al. The Study of Integrated Type Full Color Sensor with a-SiC/a-Si PIN Heterojunction[J]. Acta Electronica Sinica, 1992, (5): 47-52.
[1]徐重阳,王长安,周雪梅,邹雪城,赵伯芳.α-SiC/α-Si PIN异质结集成型全色色敏元件的研究[J].电子学报,1992(05):47-52. DOI：

Xu Zhongyang, Wang Changan, Zhou Xuemei, et al. The Study of Integrated Type Full Color Sensor with a-SiC/a-Si PIN Heterojunction[J]. Acta Electronica Sinica, 1992, (5): 47-52. DOI：

摘要

本文研究一种新型a-SiC/a-Si PIN异质结集成型全色色敏元件的制备工艺和结构

详细讨论了色敏元件的优化设计以及响应特性、暗电流等性能。实验结果表明

由于采用宽带隙的a-SiC窗口层和分离反应室的PECVD工艺

使色敏元件的灵敏度和暗电流特性得到了明显改善。

Abstract

In this paper

the integrated type full color sensor with a-SiC/a-Si PIN hete-rojunction is investigated. The preparation and structure of this new film color sensor are given. The optimum design and device chracteristics

such as spectral response and dark current

are discussed. Experimental results show that properties of the color sensor are substantially improved by the wide gap a-SiC window layer and separated reaction chamber method.

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