Experimental Study of Actively Mode-Locking Semiconductor Laser with an External Grating Cavity

Xu Changcun; Guan Yichun; Guo Yiji; Zhan Yushu

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Experimental Study of Actively Mode-Locking Semiconductor Laser with an External Grating Cavity

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- Experimental Study of Actively Mode-Locking Semiconductor Laser with an External Grating Cavity
- Acta Electronica Sinica Issue 11, Pages: 45-50(1992)
- 作者机构：
  
  1. 西安电子科技大学
  2. 西安电子科技大学西安710071
- 作者简介：
- 基金信息：
- DOI：
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- Published：1992
- 稿件说明：
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[1]许长存,关义春,过己吉,詹玉书.光栅外腔主动锁模半导体激光器特性研究[J].电子学报,1992(11):45-50.

Xu Changcun, Guan Yichun, Guo Yiji, et al. Experimental Study of Actively Mode-Locking Semiconductor Laser with an External Grating Cavity[J]. Acta Electronica Sinica, 1992, (11): 45-50.
[1]许长存,关义春,过己吉,詹玉书.光栅外腔主动锁模半导体激光器特性研究[J].电子学报,1992(11):45-50. DOI：

Xu Changcun, Guan Yichun, Guo Yiji, et al. Experimental Study of Actively Mode-Locking Semiconductor Laser with an External Grating Cavity[J]. Acta Electronica Sinica, 1992, (11): 45-50. DOI：

摘要

本文对光栅外腔主动锁模半导体激光器输出脉冲及其光谱进行了详细的实验研究.对影响完全锁模光脉冲宽度的若干因素进行优化组合

由正弦调制的普通DH-GaAlAs光栅外腔激光器得到了最短光脉冲宽度为8.2ps

重复频率为961.06MHz

峰值功率大于150mW

谱调谐范围大于10nm的锁模输出.

Abstract

The properties

such as output pulse width and spectrum of actively mode-loc-"king semiconductor laser with an external grating cavity are studied in detail. The Optimization process of the parameters of the device influencing the pulse width is given. With sinusoidal microwave modulation

a fully mode-locked pulse train is obtained with the FWHM as short as 8.2ps

repeated frequency 961.06MHz

peak power greater than 150mW and tuning range greater than 10nm.

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