Silicon Bipolar Transistors with Poly Emitter for 77K Operation

Zheng Jiang.Wang Shu.Wang Yian.Wu Jing.Wei Tongli; Tong Qinyi

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Silicon Bipolar Transistors with Poly Emitter for 77K Operation

更新时间：2025-12-08

- Silicon Bipolar Transistors with Poly Emitter for 77K Operation
- Acta Electronica Sinica Issue 8, Pages: 23-28(1992)
- 作者机构：
  
  1. 东南大学微电子中心
  2. 东南大学微电子中心南京 210018
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1992
- 稿件说明：
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[1]郑茳,王曙,王燕,吴金,魏同立,童勤义.77K多晶硅发射区双极型晶体管[J].电子学报,1992(08):23-28.

Zheng Jiang.Wang Shu.Wang Yian.Wu Jing.Wei Tongli, Tong Qinyi. Silicon Bipolar Transistors with Poly Emitter for 77K Operation[J]. Acta Electronica Sinica, 1992, (8): 23-28.
[1]郑茳,王曙,王燕,吴金,魏同立,童勤义.77K多晶硅发射区双极型晶体管[J].电子学报,1992(08):23-28. DOI：

Zheng Jiang.Wang Shu.Wang Yian.Wu Jing.Wei Tongli, Tong Qinyi. Silicon Bipolar Transistors with Poly Emitter for 77K Operation[J]. Acta Electronica Sinica, 1992, (8): 23-28. DOI：

摘要

本文介绍了适于77K工作的多晶硅发射区双极型晶体管

给出了在不同工作电流条件下的电流增益的温度模型。结果表明在小电流条件下电流增益随温度下降而下降得更为剧烈

并且讨论了在不同注入情况下

浅能级杂质的陷阱作用对截止频率的影响。

Abstract

The silicon bipolar transistors with poly emitter suitable for 77k operation are presented in this paper. Temperature models of current gain at different current injection le-vels are given. The results indicate that current gain decrease more rapidly as temperature falls at lower current injection level. The trapping effect of the shallow-level dopants on cut-off frequency with various injection condition is discussed.

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Related Author

魏同立

肖志雄

吴金

郑茳

张咏梅

李树荣

郑云光

郭维廉

Related Institution

Microelectronics Center, Southeast University

Dept.of Electronic Eng. Tianjin University

NINT,Xi’an 710024)Wei Tongli and Zheng Jiang

东南大学微电子中心

西北核技术研究所东南大学微电子中心

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