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1. 化京大学微电子学研究所
2. 机械电子工业部 北京 1000871
3. 北京 100820
Published:1993
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[1]王阳元,徐立,武国英,俞忠钰.ULSI相移光刻技术[J].电子学报,1993(02):77-83.
Wang Yangyuan, Xu Li, Wu Guoying. Phase Shifting Lithography for ULSI Applications[J]. Acta Electronica Sinica, 1993, (2): 77-83.
[1]王阳元,徐立,武国英,俞忠钰.ULSI相移光刻技术[J].电子学报,1993(02):77-83. DOI:
Wang Yangyuan, Xu Li, Wu Guoying. Phase Shifting Lithography for ULSI Applications[J]. Acta Electronica Sinica, 1993, (2): 77-83. DOI:
相移掩模光刻技术
是近几年来为了开发超大规模集成电路(ULSI)而发展起来的一种新颖光刻技术。它应用了光学相移掩模方法
大大提高了现有光学光刻设备的分辨率水平。本文综述了相移光刻技术的发展及其在ULSI中的应用。
Recently
phase shifting lithography
as a novel lithography process
has been developped (or ULSI applications. It utilizes optical phase shifting mask to improve resolution limit for an existing wafer stepper. This paper describes the development of phase shifting lithography and its applications in ULSI technology.
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