Formation of Crystalline o-Si3N4 Layer by Multiple N+ Implantation into Si at High Temperature

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- Formation of Crystalline o-Si3N4 Layer by Multiple N+ Implantation into Si at High Temperature
- Acta Electronica Sinica Issue 8, Pages: 77-79(1992)
- 作者机构：
  
  中国科学院上海冶金所离子束开放研究实验室,上海,200050
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- Published：1992
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[1]柳襄怀.高温多次N~+注入硅形成晶态α-Si_3N_4研究[J].电子学报,1992(08):77-79.

Liu Xiaughuai. Formation of Crystalline o-Si3N4 Layer by Multiple N+ Implantation into Si at High Temperature[J]. Acta Electronica Sinica, 1992, (8): 77-79.
[1]柳襄怀.高温多次N~+注入硅形成晶态α-Si_3N_4研究[J].电子学报,1992(08):77-79. DOI：

Liu Xiaughuai. Formation of Crystalline o-Si3N4 Layer by Multiple N+ Implantation into Si at High Temperature[J]. Acta Electronica Sinica, 1992, (8): 77-79. DOI：

在1000℃高温下

经多次N+注入硅形成了晶态α-si

省去了常规SOI技术中的高温长时间热退火工艺。这对于简化工艺步骤、降低工艺温度和缩短工艺时间有实际意义。

Crystalline α-Si3N4 layer was formed by multiple N+ implantation into Si at high temperature

which omitted post high temperature annealing time. It is practically beneficail for simplifying working processes

lowering temperature and shortering time.

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