SC Q-Multiplier Bandpass Structure

Yang Zhimin

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SC Q-Multiplier Bandpass Structure

更新时间：2025-12-08

- SC Q-Multiplier Bandpass Structure
- Acta Electronica Sinica Issue 5, Pages: 85-87(1992)
- 作者机构：
  
  西北师范学院,兰州,730070
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1992
- 稿件说明：
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[1]杨志民.开关电容Q倍增带通结构[J].电子学报,1992(05):85-87.

Yang Zhimin. SC Q-Multiplier Bandpass Structure[J]. Acta Electronica Sinica, 1992, (5): 85-87.
[1]杨志民.开关电容Q倍增带通结构[J].电子学报,1992(05):85-87. DOI：

Yang Zhimin. SC Q-Multiplier Bandpass Structure[J]. Acta Electronica Sinica, 1992, (5): 85-87. DOI：

摘要

高Q值的开关电容带通双二次节需要很高的电容比和较大的芯片面积。本文从理论和设计两方面说明采用Q倍增结构可以使这个问题得到较好的解决。

Abstract

The realization of high-Q switched-capacitor （SC） bandpass biquadratic- joints require very high capacitor spread and larger chip area. It is shown in this paper that these problems can be alleviated by utilizing the SC Q-multiplier bandpass structure.

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