Fabrication of GaAs MESFET and Circuit on Si Substrate Utilizing Ti/TiW/Au as Gate Metallization

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- Fabrication of GaAs MESFET and Circuit on Si Substrate Utilizing Ti/TiW/Au as Gate Metallization
- Acta Electronica Sinica Issue 2, Pages: 37-40(1992)
- 作者机构：
  
  1. 东南大学微电子中心
  2. 东南大学微电子中心南京 210018
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1992
- 稿件说明：
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[1]李明祥,童勤义,庄庆德.采用Ti/TiW/Au栅制作Si衬底上CaAs MESFET与集成电路[J].电子学报,1992(02):37-40.

Li Mingxiang, Tong Qinyi, zhuang Qingde. Fabrication of GaAs MESFET and Circuit on Si Substrate Utilizing Ti/TiW/Au as Gate Metallization[J]. Acta Electronica Sinica, 1992, (2): 37-40.
[1]李明祥,童勤义,庄庆德.采用Ti/TiW/Au栅制作Si衬底上CaAs MESFET与集成电路[J].电子学报,1992(02):37-40. DOI：

Li Mingxiang, Tong Qinyi, zhuang Qingde. Fabrication of GaAs MESFET and Circuit on Si Substrate Utilizing Ti/TiW/Au as Gate Metallization[J]. Acta Electronica Sinica, 1992, (2): 37-40. DOI：

本文从制备硅集成电路（SiIc）与砷化镓集成电路（GaAs IC）单片兼容电路的要求出发

提出了Ti/TiW/Au肖特基金属化结构

制备出了性能良好的Ti/TiW/Au栅Si衬底上分子束外延（MBE）的GaAsMESFET与GaAs IC。

We have developed a Ti/TiW/Au gate metallization technique

which can be used for the compatible co-integration of GaAs IC and Si IC. By utilizing Ti/TiW/Au gate metallization

we have obtained good MESFET’s and IC’s performances of GaAs grown on-Si substrate by molecular beam epitaxy.

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