Experimental Research for Field-Enhanced a-Si:H Photoemitter

Hai Yuhan and Chen Yuanxin

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Experimental Research for Field-Enhanced a-Si:H Photoemitter

更新时间：2025-12-08

- Experimental Research for Field-Enhanced a-Si:H Photoemitter
- Acta Electronica Sinica Issue 2, Pages: 26-30(1992)
- 作者机构：
  
  1. 中国科学院电子学研究所
  2. 中国科学院电子学研究所北京 100080
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1992
- 稿件说明：
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[1]海宇涵,陈远星.场增强α-Si:H光电发射体实验研究[J].电子学报,1992(02):26-30.

Hai Yuhan and Chen Yuanxin. Experimental Research for Field-Enhanced a-Si:H Photoemitter[J]. Acta Electronica Sinica, 1992, (2): 26-30.
[1]海宇涵,陈远星.场增强α-Si:H光电发射体实验研究[J].电子学报,1992(02):26-30. DOI：

Hai Yuhan and Chen Yuanxin. Experimental Research for Field-Enhanced a-Si:H Photoemitter[J]. Acta Electronica Sinica, 1992, (2): 26-30. DOI：

摘要

设计了场增强a-Si:H光电发射体

其结构是S

—n-p a-Si:H—Al:C

它具有夹心结构和低功函数表面

并因电荷放大效应而提高了光电产额。初步实验表明

在0.56μm波长

量子效串为2.1％

长波限在0.82μm。文中讨论了实验中存在的问题和提高量子效率的方法。

Abstract

Field-enhanced a-Si:H photoemitter is designed. The device is a SnO2--n-p a-Si:H--Al:Cs:O structure which incorporates a low work-function surface in n-p a-Si:H with charge amplification effect to give an increased photoelectron yield. Experimental demostration of photoemission from a-Si:H in this mode is reported. The photoelectron yield is 2.1% at 0.56μm wavelength and the long-wavelength cutoff is 0.82μm. Problems in the experiment and the method of obtaining high quantum efficiency are discussed.

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