Research and Development of SIMOX Technology and CMOS/SIMOX Devices

Wang Yangyuan; Chen Nanxiang; Wang Zhong-lie

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Research and Development of SIMOX Technology and CMOS/SIMOX Devices

更新时间：2025-12-08

- Research and Development of SIMOX Technology and CMOS/SIMOX Devices
- Acta Electronica Sinica Issue 5, Pages: 75-80(1992)
- 作者机构：
  
  1. 北京大学徽电子学研究所
  2. 北京大学徽电子学研究所北京 100871
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1992
- 稿件说明：
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[1]王阳元,陈南翔,王忠烈.SIMOX技术及CMOS/SIMOX器件的研究与发展[J].电子学报,1992(05):75-80.

Wang Yangyuan, Chen Nanxiang, Wang Zhong-lie. Research and Development of SIMOX Technology and CMOS/SIMOX Devices[J]. Acta Electronica Sinica, 1992, (5): 75-80.
[1]王阳元,陈南翔,王忠烈.SIMOX技术及CMOS/SIMOX器件的研究与发展[J].电子学报,1992(05):75-80. DOI：

Wang Yangyuan, Chen Nanxiang, Wang Zhong-lie. Research and Development of SIMOX Technology and CMOS/SIMOX Devices[J]. Acta Electronica Sinica, 1992, (5): 75-80. DOI：

摘要

SIMOX技术是最具有发展前途的SOI技术之一。在发展薄硅层、深亚微米OMOS/SOI集成电路中

SIMOX技术占有极其重要的地位。本文综述了SIMOX基片的形成、高质量SIMOX基片的制备方法。阐述了薄硅层OMOS/SIMOX器件的工艺特点以及器件的性能特点。本文也就SIMOX技术及GMOS/SIMOX器件的研究现状及发展趋势进行了讨论。

Abstract

SIMOX is one of the most promising SOI technologies. SIMOX technology occupies a very important position in the development of thin film Si layer and deep submicrometer CMOS/SOI IC. This paper rewiews the formation of SIMOX wafers and the methods of producing high quality SIMOX wafers

and presents the characteristic processing and performance of thin film CMOS/SIMOX devices.The status and trends of SIMOX technology and CMOS/SIMOX devices are also discussed.

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