Computational Modelling ol Horizontal and Rectangular Silicon Epitaxial Reactor

Liang Junwu; Guo Yulong; Yang Hui

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Computational Modelling ol Horizontal and Rectangular Silicon Epitaxial Reactor

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- Computational Modelling ol Horizontal and Rectangular Silicon Epitaxial Reactor
- Acta Electronica Sinica Issue 3, Pages: 30-35(1991)
- 作者机构：
  
  中国科学院半导体研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1991
- 稿件说明：
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[1]梁骏吾,郭予龙,杨辉.水平式矩形硅外延系统的计算机模拟[J].电子学报,1991(03):30-35.

Liang Junwu, Guo Yulong, Yang Hui. Computational Modelling ol Horizontal and Rectangular Silicon Epitaxial Reactor[J]. Acta Electronica Sinica, 1991, (3): 30-35.
[1]梁骏吾,郭予龙,杨辉.水平式矩形硅外延系统的计算机模拟[J].电子学报,1991(03):30-35. DOI：

Liang Junwu, Guo Yulong, Yang Hui. Computational Modelling ol Horizontal and Rectangular Silicon Epitaxial Reactor[J]. Acta Electronica Sinica, 1991, (3): 30-35. DOI：

摘要

本文针对水平式矩形硅外延系统

在分析其物理化学过程的基础上

不做滞流层或发展边界层模型的假设

把系统的温度发展分为两个阶段

即温度发展阶段和温度充分发展阶段。考虑到温度对速度分布的影响

混合气体物性对温度的强烈依赖性以及热扩散和表面反应速率的因素

分阶段进行求解

得到了生长速率分布与生长温度、基座倾角、气体流量以及反应物浓度的关系

并与实验进行比较

取得较为满意的结果。

Abstract

Based on the physical analysis of the horizontal and rectangular silicon epitaxial reactor

we have abandoned the stagnant and boundary sublayers assumption. In this work

various temperature zones and effects of temperature on velocity distribution and physical properties of mixed gases are considered. In addition

the thermodiffusion is taken into account. The distributions of temperature

velocity and concentration are calculated and the dependence of the growth rate distribution along the susceptor on the reactor geometry and technological conditions is obtained. Calculating results are also compared with experimental data.

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