The Study on the Initial Conductance Mechanism of Thin-Gate SiO<sub>2</sub>

Zhang Hui; Xu Mingzhen; Tan Changhua; Wang Yangyuan

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The Study on the Initial Conductance Mechanism of Thin-Gate SiO₂

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- The Study on the Initial Conductance Mechanism of Thin-Gate SiO₂
- Acta Electronica Sinica Issue 1, Pages: 44-49(1991)
- 作者机构：
  
  北京大学
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1991
- 稿件说明：
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[1]张晖,许铭真,谭长华,王阳元.薄栅SiO_2早期电导机制的研究[J].电子学报,1991(01):44-49.

Zhang Hui, Xu Mingzhen, Tan Changhua, et al. The Study on the Initial Conductance Mechanism of Thin-Gate SiO₂[J]. Acta Electronica Sinica, 1991, (1): 44-49.
[1]张晖,许铭真,谭长华,王阳元.薄栅SiO_2早期电导机制的研究[J].电子学报,1991(01):44-49. DOI：

Zhang Hui, Xu Mingzhen, Tan Changhua, et al. The Study on the Initial Conductance Mechanism of Thin-Gate SiO₂[J]. Acta Electronica Sinica, 1991, (1): 44-49. DOI：

摘要

本文利用恒定电压作用方法

测量硅栅MOS结构高场隧道电流的时间相关特性

研究了薄栅SiO

的早期电导机制。认为在高场作用下

影响SiO

电导的主要因素不仅有SiO

体内阳极附近局域内的新生正电荷和SiO

体内原生、新生电子陷阱

还应当包括新生界面态;并且

新生正电荷和新生界面态很有可能源于同一种产生物理机制。

Abstract

The initial conductance mechanism of the thin gate SiO2 has been systematically studied by measuring the time-dependent tunneling current characteristics under constant voltage stress. It has been indicated that the oxide conductance is not only affected by initial and generated trapping electrons and newly generated positive charges in the SiO2 bulk

but also affected by generated interface states. The generated positive charges and the generated interface states result probably from the same physics generation mechanism.

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The Study on the Initial Conductance Mechanism of Thin-Gate SiO2

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The Study on the Initial Conductance Mechanism of Thin-Gate SiO₂