Image Processing of Micromorphology of Hydrogenated Amorphous Silicon Films

Lin Hongyi; Shen Tingzhi

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Image Processing of Micromorphology of Hydrogenated Amorphous Silicon Films

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- Image Processing of Micromorphology of Hydrogenated Amorphous Silicon Films
- Acta Electronica Sinica Issue 6, Pages: 91-93(1991)
- 作者机构：
  
  1.   北京理工大学电子工程系
  2.   北京大学微电子所北京 100081
  3.   北京 100871
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1991
- 稿件说明：
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[1]林鸿溢,沈庭芝,李映雪.a—Si:H薄膜显微形貌的图象处理[J].电子学报,1991(06):91-93.

Lin Hongyi, Shen Tingzhi. Image Processing of Micromorphology of Hydrogenated Amorphous Silicon Films[J]. Acta Electronica Sinica, 1991, (6): 91-93.
[1]林鸿溢,沈庭芝,李映雪.a—Si:H薄膜显微形貌的图象处理[J].电子学报,1991(06):91-93. DOI：

Lin Hongyi, Shen Tingzhi. Image Processing of Micromorphology of Hydrogenated Amorphous Silicon Films[J]. Acta Electronica Sinica, 1991, (6): 91-93. DOI：

摘要

用动态方法跟踪观测a-Si:H薄膜原位退火过程中发生的晶化现象

获得晶化形貌的显徽图象

通过对图象的数字采集和计算

得到a-Si:H薄膜样品在不同退火温度下

显徽图像的Sandbox关系曲线。结果表明

在一定条件下所形成的微结构具有分形结构特性。计算了显徽图象的分维

讨论了a-Si:H薄膜结构驰豫（相变）与分形结构形成的关系。

Abstract

Crystallization phenomena of hydrogenated amorphous silicon （a-Si: H） films during in situ annealing process are investigated by transmission electron microscope （TEM）. The micromorphology images are observed in terms of dynamic method. Using image processing technique

the sandbox relationship graph of sample’s microphotograph under different annealing temperatures （450℃ and 800℃） is obtained. The results show that under some conditions

the microstructure formed in the a-Si:H film has characteristic of fractal structure. The fractal dimension of the microphotograph is calculated. The relationship between the structural phase transition of the amorphous silicon film and the fractal structure is discussed.

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