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1. 西安交通大学
2. 西安交通大学 西安 710049
Published:1992
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[1]刘付德,杨百屯,屠德民,刘耀南.强电场作用下的固体电介质中电子填充陷阱动力学[J].电子学报,1992(03):65-70.
Liu Fude, Yang Baitun, Tu Demin, et al. Kinetics of Traps Filling in Solid Dielectrics Under Strong Electrical Field[J]. Acta Electronica Sinica, 1992, (3): 65-70.
本文阐述了用表面电位测量法研究固体电介质在强电场下电子填充陷阱的动力学特性。改进的一级捕获动力学方程定性地解释了陷阱填充过程以及电子填充陷阱稳态值随电场的变化而出现峰值的现象。由此分析指出在接近击穿的电场范围内
导带中的自由电子要与陷阱化电子发生碰撞电离
当这种碰撞电离退陷阱化达到一定程度时
介质便发生电击穿。
The kinetic properties of electrons capture in solid dielectrics under strong electric field are studied with surface potential measurement in this paper. The process of traps filling and the variation of maximum filling values with field are qualitatively explained with first-order trapping kinetic equation. Further analysis shows that in the range of strong field approaching breakdown value
the free electrons in conduction band will collide with the trapped electrons. Once the colliding ionization develops to some extent
electric breakdown occurs.
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