The Role of Backgating in GaAs MESFET Orientation Effect

Huang Qingan; Tong Qinyi

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The Role of Backgating in GaAs MESFET Orientation Effect

更新时间：2025-12-08

- The Role of Backgating in GaAs MESFET Orientation Effect
- Acta Electronica Sinica Issue 8, Pages: 29-34(1992)
- 作者机构：
  
  1. 东南大学微电子中心
  2. 东南大学微电子中心南京 210018
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1992
- 稿件说明：
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[1]黄庆安,童勤义.GaAs MESFET栅取向效应中背栅的作用[J].电子学报,1992(08):29-34.

Huang Qingan, Tong Qinyi. The Role of Backgating in GaAs MESFET Orientation Effect[J]. Acta Electronica Sinica, 1992, (8): 29-34.
[1]黄庆安,童勤义.GaAs MESFET栅取向效应中背栅的作用[J].电子学报,1992(08):29-34. DOI：

Huang Qingan, Tong Qinyi. The Role of Backgating in GaAs MESFET Orientation Effect[J]. Acta Electronica Sinica, 1992, (8): 29-34. DOI：

摘要

根据压电效应模型

本文详细研究了压电电荷对GaAs MESFET沟道与衬底界面耗尽层的影响。认为正压电电荷比负压电电荷所引起的阀值电压漂移大

较好解释了（100）衬底上沿[011]和[011]取向的GaAs MESFET阈值电压非对称反向漂移的现象。

Abstract

Based on the piezoelectric model

this paper has studied the effect of piezoele-ctric charge on the depletion layer at channel/substrate interface of GaAs MESFET. It has been suggested that threshold voltage shifts of GaAs MESFET for positive piezoelectric char-ges are greater than those for negative. The interpretation of asmmetric inverse shifts of GaAs MESFET oriented in [011] and [011] directions is satisfactory.

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