Novel Fully Integrated MOSFET-C Active Elaments

Xi Baiqing; Zheng Shuming

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Novel Fully Integrated MOSFET-C Active Elaments

更新时间：2025-12-08

- Novel Fully Integrated MOSFET-C Active Elaments
- Acta Electronica Sinica Issue 6, Pages: 102-105(1991)
- 作者机构：
  
  1. 南京邮电学院
  2. 南京邮电学院南京 210003
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1991
- 稿件说明：
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[1]奚柏清,郑书铭.新型全集成MOSFET-C有源元件[J].电子学报,1991(06):102-105.

Xi Baiqing, Zheng Shuming. Novel Fully Integrated MOSFET-C Active Elaments[J]. Acta Electronica Sinica, 1991, (6): 102-105.
[1]奚柏清,郑书铭.新型全集成MOSFET-C有源元件[J].电子学报,1991(06):102-105. DOI：

Xi Baiqing, Zheng Shuming. Novel Fully Integrated MOSFET-C Active Elaments[J]. Acta Electronica Sinica, 1991, (6): 102-105. DOI：

摘要

本文介绍用MOS场效应管

电容和运算放大器构成的全集成有源元件

包括GIC、模拟电感和频变负阻（FDNR）等元件电路。这些元件以双运算放大器的Riordan电路为基础

并使用四个匹配晶体管组达到特性的线性化。结果将导致以这类元件为基本单元的新型全集成MOS FET-C连续时间滤波器的诞生。

Abstract

The paper describes a new class of fully integrated active elements obtained by means of MOS transistors

MOS capacitors and MOS op-amps. These new elements include GIC

inductance simulation and FDNR. The constructions are based on Riordan prototype circuit and the linear characters are achieved by using four matched MOSFET’s versions. Consequently

the novel fully integrated MOS-FET-C continuous-time filters are produced.

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