A Silicon Wafer Direct Bonding Mechanism and Rapid Thermal Bonding Technology

Tong Qinyi; Xu Xiaoli; Shen Hua; Zhang Huizheng

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A Silicon Wafer Direct Bonding Mechanism and Rapid Thermal Bonding Technology

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- A Silicon Wafer Direct Bonding Mechanism and Rapid Thermal Bonding Technology
- Acta Electronica Sinica Issue 2, Pages: 27-33(1991)
- 作者机构：
  
  1. 东南大学微电子中心
  2. 东南大学微电子中心南京
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1991
- 稿件说明：
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[1]童勤义,徐晓莉,沈华,张会珍.硅片直接键合机理及快速热键合工艺[J].电子学报,1991(02):27-33.

Tong Qinyi, Xu Xiaoli, Shen Hua, et al. A Silicon Wafer Direct Bonding Mechanism and Rapid Thermal Bonding Technology[J]. Acta Electronica Sinica, 1991, (2): 27-33.
[1]童勤义,徐晓莉,沈华,张会珍.硅片直接键合机理及快速热键合工艺[J].电子学报,1991(02):27-33. DOI：

Tong Qinyi, Xu Xiaoli, Shen Hua, et al. A Silicon Wafer Direct Bonding Mechanism and Rapid Thermal Bonding Technology[J]. Acta Electronica Sinica, 1991, (2): 27-33. DOI：

摘要

本文的理论与实验结果说明

硅片表面吸附的OH团是室温下硅片相互吸引的主要根源。采用SIMS和红外透射谱定量测量了OH吸附量。开发了表面活化技术。发现键合强度随温度而增大是键合面积增加所致。SiO

/SiO

键合之界面中各种物质的扩散及氧化层粘滞流动可以消除界面微观间隙。经表面活化的两硅片经室温贴合

150℃预键合

800℃

2小时退火后经1200℃

2分钟快速热键合可实现完善的键合且原有杂质分布改变很小

为减薄工艺提供了一个技术基础。

Abstract

SIMS and IR transmittance techniques are employed to measure the OH groups absorbed on wafer surface quatitatively. The increase in bonding strength with temperture is caused by bonding area increase. The diffusion of species existing at bonding interface and the oxide viscous flow can eliminate micro-gaps. Complete bonding can be achieved by 150℃ prebonding and 800％ annealing for 2 hrs followed by a rapid thermal bonding at 1200℃ for 2 mins.

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