An Integrated MOS Ring Oscillator Pressure Sensor with Silicon Box Structure

Wang Yaolin

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An Integrated MOS Ring Oscillator Pressure Sensor with Silicon Box Structure

更新时间：2025-12-08

- An Integrated MOS Ring Oscillator Pressure Sensor with Silicon Box Structure
- Acta Electronica Sinica Issue 2, Pages: 107-110(1991)
- 作者机构：
  
  1. 浙江大学
  2. 清华大学
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1991
- 稿件说明：
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[1]王跃林,郑心畲,刘理天,李志坚.硅盒结构集成MOS环振式压力传感器[J].电子学报,1991(02):107-110.

Wang Yaolin. An Integrated MOS Ring Oscillator Pressure Sensor with Silicon Box Structure[J]. Acta Electronica Sinica, 1991, (2): 107-110.
[1]王跃林,郑心畲,刘理天,李志坚.硅盒结构集成MOS环振式压力传感器[J].电子学报,1991(02):107-110. DOI：

Wang Yaolin. An Integrated MOS Ring Oscillator Pressure Sensor with Silicon Box Structure[J]. Acta Electronica Sinica, 1991, (2): 107-110. DOI：

摘要

本文报道了一种硅盒结构的、具有频率输出的集成MOS环振式压力传感器。结果表明

与该结构相对应的硅盒技术与IC工艺完全兼容

非常适合集成压力传感器的制作

为进一步研制各种集成压力传感器提供了一种简单的、先进的技术。文中还讨论了硅盒结构PMOSFET的力敏特性。

Abstract

An.integrated MOS ring oscillator pressure sensor with silicon box structure

having frequency as output is reported. The results show that the silicon box technology for this structure is quite compatible with current IC technology

and is suitable (or the fabrication of integrated pressure sensors. Therefore

this study provides a simple and advanced technology for fabracation of various kinds of integrated pressure sensors. Besides

the stress-sensitive properties of PMOSFET with the silicon box structure are also discussed.

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