This paper presents the new technology in preparing double layered transparent conductive films of ITO/SnO2 in non-crystalline silicon solar cell by use of ring-shaped double electron beam evaporation method. The surface resistance of such film prepared under optimal technological condition amounts to 6.1Ω/□. The film has a transmittance over 90% of visible light

and a carrier density up to 1.0×1021 cm-3. Diffusion of In in ITO to a-Si:H can be effectively suppressed with SnO2 layer of 200-300 A in thickness.