The Relation Between Threshold Voltage Yield and Channel Length for MOS Transistors

Zhao Honglin

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The Relation Between Threshold Voltage Yield and Channel Length for MOS Transistors

更新时间：2025-12-08

- The Relation Between Threshold Voltage Yield and Channel Length for MOS Transistors
- Acta Electronica Sinica Issue 6, Pages: 102-103(1990)
- 作者机构：
  
  天津大学电子工程系
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1990
- 稿件说明：
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[1]赵鸿麟.MOS晶体管V_T成品率与沟道长度的关系[J].电子学报,1990(06):102-103.

Zhao Honglin. The Relation Between Threshold Voltage Yield and Channel Length for MOS Transistors[J]. Acta Electronica Sinica, 1990, (6): 102-103.
[1]赵鸿麟.MOS晶体管V_T成品率与沟道长度的关系[J].电子学报,1990(06):102-103. DOI：

Zhao Honglin. The Relation Between Threshold Voltage Yield and Channel Length for MOS Transistors[J]. Acta Electronica Sinica, 1990, (6): 102-103. DOI：

摘要

本文用Monte Carlo法模拟计算短沟MOSFET阈值电压V

的成品率。当沟道变短

由于短沟道效应产品的V

值变得更加分散。此外

当沟道长度L进入亚微米区

源漏的耗尽区可能在沟道中相接或重迭而使沟道消失。上述二个原因使V

的成品率下降。

Abstract

The Monte Carlo method has been used to study the yield for threshold voltage VT of short channel MOS transistors. As the channel length of MOS transistors is getting smaller

the dispersion of VT becomes serious due to the short channel effect. Besides

when channel length L enters submicrons the depletion layers of source and drain junction may cause channel to disappear. As a result of both reasons above

the yield of VT drops.

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