The Shift of Fermi Level at the Interface between Metal and Ⅲ-Ⅴ Compound Semiconductor

Shao Bingxian

您当前的位置：

首页 >

文章列表页 >

The Shift of Fermi Level at the Interface between Metal and Ⅲ-Ⅴ Compound Semiconductor

更新时间：2025-12-08

- The Shift of Fermi Level at the Interface between Metal and Ⅲ-Ⅴ Compound Semiconductor
- Acta Electronica Sinica Issue 1, Pages: 50-54(1991)
- 作者机构：
  
  复旦大学
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1991
- 稿件说明：
移动端阅览
[1]邵丙铣.金属/Ⅲ-Ⅴ族半导体界面费米能级的位移[J].电子学报,1991(01):50-54.

Shao Bingxian. The Shift of Fermi Level at the Interface between Metal and Ⅲ-Ⅴ Compound Semiconductor[J]. Acta Electronica Sinica, 1991, (1): 50-54.
[1]邵丙铣.金属/Ⅲ-Ⅴ族半导体界面费米能级的位移[J].电子学报,1991(01):50-54. DOI：

Shao Bingxian. The Shift of Fermi Level at the Interface between Metal and Ⅲ-Ⅴ Compound Semiconductor[J]. Acta Electronica Sinica, 1991, (1): 50-54. DOI：

摘要

本文详细地叙述了金属/GaAs和金属/GaSb界面

在极低复盖度（亚单层至几个单层）下的费米能级位移的实验结果

并应用缺陷能级密度随金属复盖度的增加而增加的模型进行理论计算

计算结果与实验曲线相吻合。

Abstract

This paper describes the experimental results of Fermi level shift at the interfaces of metal-GaAs and metal-GaSb at very low coverage of metals. By the proposed model which assumes that the defect density increases with coverage

the calculations are made in detail. Calculation curves are in good agreement with experimental curves.

关键词

Keywords

references

Views

153

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

No data

Related Author

No data

Related Institution

No data

⁰