Evaluation of Spatial Distribution of the Effective Minority Generation Lifetime in Ion Implanted MOS Capacitors

Huang Qingan; Lu Shiji

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Evaluation of Spatial Distribution of the Effective Minority Generation Lifetime in Ion Implanted MOS Capacitors

更新时间：2025-12-08

- Evaluation of Spatial Distribution of the Effective Minority Generation Lifetime in Ion Implanted MOS Capacitors
- Acta Electronica Sinica Issue 5, Pages: 65-69(1990)
- 作者机构：
  
  东南大学微电子中心
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1990
- 稿件说明：
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[1]黄庆安,吕世冀.离子注入MOS有效少子产生寿命空间分布的确定[J].电子学报,1990(05):65-69.

Huang Qingan, Lu Shiji. Evaluation of Spatial Distribution of the Effective Minority Generation Lifetime in Ion Implanted MOS Capacitors[J]. Acta Electronica Sinica, 1990, (5): 65-69.
[1]黄庆安,吕世冀.离子注入MOS有效少子产生寿命空间分布的确定[J].电子学报,1990(05):65-69. DOI：

Huang Qingan, Lu Shiji. Evaluation of Spatial Distribution of the Effective Minority Generation Lifetime in Ion Implanted MOS Capacitors[J]. Acta Electronica Sinica, 1990, (5): 65-69. DOI：

摘要

本文讨论了深耗尽MOS电容器的少子产生机构

提出测量有效少子产生寿命空间分布的方法。对低剂量注B的样品进行了测量

结果表明注入层比体内的有效少子产生寿命低

从Si-SiO

界面到体内

有效少子产生寿命逐渐增大

最后到达注入离子没有穿透的体区

保持一常数。

Abstract

Minority generation mechanisms of deep depleted MOS capacitor are discussed in this paper. The method to evaluate spatial distribution of the effective minority generation lifetime is proposed. The sample of low dose （implanted B） is measured. It is shown that the effective generation lifetime is gradually increased from the interface to the interior and the lifetime is a constant in a region deeper than 0.8μm

where the implanted boron does not penetrate.

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