Analysis on The Spectral Properties of External Cavity Semiconductor Lasers
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Analysis on The Spectral Properties of External Cavity Semiconductor Lasers
Acta Electronica SinicaIssue 3, Pages: 7-13(1989)
作者机构:
北京邮电学院
作者简介:
基金信息:
DOI:
CLC:
Published:1989
稿件说明:
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[1]惠荣庆,陶尚平.外腔半导体激光器频谱特性研究[J].电子学报,1989(03):7-13.
Hui Rong-qing, Tao Shang-qing. Analysis on The Spectral Properties of External Cavity Semiconductor Lasers[J]. Acta Electronica Sinica, 1989, (3): 7-13.
Hui Rong-qing, Tao Shang-qing. Analysis on The Spectral Properties of External Cavity Semiconductor Lasers[J]. Acta Electronica Sinica, 1989, (3): 7-13.DOI:
Analysis on The Spectral Properties of External Cavity Semiconductor Lasers
摘要
本文在外腔半导体激光器的研究中引入了改进的速率方程组
用解析方法导出了稳态振荡条件和谱线宽度表达式
这些表达式适用于具有任意反馈量的外腔半导体激光器。理论分析与实验相符。
Abstract
A set of improved rate equations is introduced to study external-cavity semiconductor lasers
and expressions of steady state oscillation conditions and spectral linewidth are derived analytically
which are suitable for semiconductor lasers with any amount of optical feedback. Theoretical analysis is found to be in agreement with relevant experiment results.