Study on Deposition of SiO<sub>2</sub> Films as a Mask for Zn Diffusion GaAs and AlGaAs by RF Sputtering

Wang Lei; Zhang Peiliang; Liu Jing; Wang Zhizhong

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Study on Deposition of SiO₂ Films as a Mask for Zn Diffusion GaAs and AlGaAs by RF Sputtering

更新时间：2025-12-08

- Study on Deposition of SiO₂ Films as a Mask for Zn Diffusion GaAs and AlGaAs by RF Sputtering
- Acta Electronica Sinica Issue 4, Pages: 122-123(1990)
- 作者机构：
  
  清华大学无线电系
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- Published：1990
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[1]王雷,张培亮,刘静,王志忠.高频溅射SiO_2膜掩蔽GaAs和AlGaAs/GaAs中Zn扩散的研究[J].电子学报,1990(04):122-123.

Wang Lei, Zhang Peiliang, Liu Jing, et al. Study on Deposition of SiO₂ Films as a Mask for Zn Diffusion GaAs and AlGaAs by RF Sputtering[J]. Acta Electronica Sinica, 1990, (4): 122-123.
[1]王雷,张培亮,刘静,王志忠.高频溅射SiO_2膜掩蔽GaAs和AlGaAs/GaAs中Zn扩散的研究[J].电子学报,1990(04):122-123. DOI：

Wang Lei, Zhang Peiliang, Liu Jing, et al. Study on Deposition of SiO₂ Films as a Mask for Zn Diffusion GaAs and AlGaAs by RF Sputtering[J]. Acta Electronica Sinica, 1990, (4): 122-123. DOI：

摘要

本文报导了在GaAs、AlGaAs表面上用高频溅射法制备SiO

膜的淀积规律

特别对用SiO

膜掩蔽GaAs、AlGaAs/GaAs中的Zn扩散进行了实验研究

结果证明用高频溅射制备SiO

膜可以有效地掩蔽GaAs

AlGaAs/GaAs中的Zn扩散。

Abstract

The deposition of SiO2 films on GaAs and AlGaAs by RF sputtering is described in this paper. The properties of films such as etching rate

refractive index

hole density

IR absorption spectra and Auger electron spectra have been measured and analysed.It is found that the sputtered SiO2 film is effective as a mask for Zn diffusion in GaAs and AlGaAs/GaAs.

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Study on Deposition of SiO2 Films as a Mask for Zn Diffusion GaAs and AlGaAs by RF Sputtering

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references

Study on Deposition of SiO₂ Films as a Mask for Zn Diffusion GaAs and AlGaAs by RF Sputtering