Power MOS Devices

Chen Xingbi

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Power MOS Devices

更新时间：2025-12-08

- Power MOS Devices
- Acta Electronica Sinica Issue 5, Pages: 97-105(1990)
- 作者机构：
  
  电子科技大学
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1990
- 稿件说明：
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[1]陈星弼.MOS型功率器件[J].电子学报,1990(05):97-105.

Chen Xingbi. Power MOS Devices[J]. Acta Electronica Sinica, 1990, (5): 97-105.
[1]陈星弼.MOS型功率器件[J].电子学报,1990(05):97-105. DOI：

Chen Xingbi. Power MOS Devices[J]. Acta Electronica Sinica, 1990, (5): 97-105. DOI：

摘要

本文综述了现代MOS型功率器件的原理、发展及应用趋势。在此类器件所用的终端技术上

提出了一个优值作标准。此外

还介绍了频率与功率的极限关系

并指出了器件的发展方向。

Abstract

The developing of power MOS devices is overviewed

including the trends of the application field. A figure of merit for the various planar junction termination techniques has been proposed. The limitation theory of the relation between the frequency and the power output has also been introduced in order to predict the trend of the evolution of the devices.

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