The Studies of Epitaxial Lateral Overgrowth Single-Crystal Si Film on SiO2 Substrate

Zhang Xu-guang; Li Ying-xue; Wang Yang-yuan

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The Studies of Epitaxial Lateral Overgrowth Single-Crystal Si Film on SiO2 Substrate

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- The Studies of Epitaxial Lateral Overgrowth Single-Crystal Si Film on SiO2 Substrate
- Acta Electronica Sinica Issue 5, Pages: 1-7(1989)
- 作者机构：
  
  1. 北京大学微电子研究所
  2. 机电部北京自动化研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1989
- 稿件说明：
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[1]张旭光,李映雪,王阳元,朱忠伶.SiO_2衬底上外延横向覆盖生长单晶硅薄膜的研究[J].电子学报,1989(05):1-7.

Zhang Xu-guang, Li Ying-xue, Wang Yang-yuan. The Studies of Epitaxial Lateral Overgrowth Single-Crystal Si Film on SiO2 Substrate[J]. Acta Electronica Sinica, 1989, (5): 1-7.
[1]张旭光,李映雪,王阳元,朱忠伶.SiO_2衬底上外延横向覆盖生长单晶硅薄膜的研究[J].电子学报,1989(05):1-7. DOI：

Zhang Xu-guang, Li Ying-xue, Wang Yang-yuan. The Studies of Epitaxial Lateral Overgrowth Single-Crystal Si Film on SiO2 Substrate[J]. Acta Electronica Sinica, 1989, (5): 1-7. DOI：

摘要

本文论述了SOI方法之一——ELO（外延横向覆盖生长）技术的特点和工艺方案。利用射频加热卧式常压外延设备进行了系统的工艺研究

重点探讨了如何提高ELO层的质量和如何减少单晶缺陷的问题。分别在10微米和15微米宽的SiO

条状图形上生长出了硅单晶层

检测分析了ELO层的结构特性。基于ELO工艺的特点提出了利用HCl在位抛光减薄ELO层的工艺。

Abstract

The characteristics and processing methods of ELO （Epitaxial Lateral Overgrowth）

one of SOI technologies

have been described. Relatively all-round processing experiments have been done on the RF heated horizontal epitaxial reactor at atmospheric pressure. The influence of processing parameters on ELO film quality and defects has been emphatically investigated. Single crystal Si film has been overgrown on 10μm and 15μm SiO2 stripes respectively

and the structural characteristics of ELO film has been inspected and analysed. According to the peculiarity of ELO process

in situ etching of ELO film by HC1 has been proposed.

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