GaAs/AIGaAs Microwave High Electron Mobility Transistor

Zhu Qi

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GaAs/AIGaAs Microwave High Electron Mobility Transistor

更新时间：2025-12-08

- GaAs/AIGaAs Microwave High Electron Mobility Transistor
- Acta Electronica Sinica Issue 1, Pages: 110-111(1989)
- 作者机构：
  
  1.   电子科技大学
  2.   河北半导体研究所成都
  3.   石家庄
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1989
- 稿件说明：
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[1]朱旗,王长河.微波GaAs/AlGaAs高电子迁移率晶体管[J].电子学报,1989(01):110-111.

Zhu Qi. GaAs/AIGaAs Microwave High Electron Mobility Transistor[J]. Acta Electronica Sinica, 1989, (1): 110-111.
[1]朱旗,王长河.微波GaAs/AlGaAs高电子迁移率晶体管[J].电子学报,1989(01):110-111. DOI：

Zhu Qi. GaAs/AIGaAs Microwave High Electron Mobility Transistor[J]. Acta Electronica Sinica, 1989, (1): 110-111. DOI：

摘要

采用国产分子束外延设备及国内外尚未报导的部分工艺

试制出具有微波特性的高电子迁移率品体管

其跨导80～135mS/mm

在4GHz下

最小噪声系数2.49dB

最大功率增益10.2dB。

Abstract

Utilizing the home-made molecular beam epitaxy system （MBE）

and employing some novel techniques

GaAs/AlGaAs high electron mobility transistors have been made successfully. The trans-conductance is at the range of 80-135mS/mm. The minimum noise figure 2.49dB and the maximum power gain 10.2 dB at 4GHz are obtained.

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