Calculation for Tunneling Current in GaAs/AIAs Heterostructure and First Trial of Heterostructure LSA Diodes

Xue Fang-shi

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Calculation for Tunneling Current in GaAs/AIAs Heterostructure and First Trial of Heterostructure LSA Diodes

更新时间：2025-12-08

- Calculation for Tunneling Current in GaAs/AIAs Heterostructure and First Trial of Heterostructure LSA Diodes
- Acta Electronica Sinica Issue 2, Pages: 44-49(1990)
- 作者机构：
  
  南京电子器件研究所
- 作者简介：
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- Published：1990
- 稿件说明：
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[1]薛舫时.GaAs/AlAs异质结构隧道电流的计算和异质结限累管初探[J].电子学报,1990(02):44-49.

Xue Fang-shi. Calculation for Tunneling Current in GaAs/AIAs Heterostructure and First Trial of Heterostructure LSA Diodes[J]. Acta Electronica Sinica, 1990, (2): 44-49.
[1]薛舫时.GaAs/AlAs异质结构隧道电流的计算和异质结限累管初探[J].电子学报,1990(02):44-49. DOI：

Xue Fang-shi. Calculation for Tunneling Current in GaAs/AIAs Heterostructure and First Trial of Heterostructure LSA Diodes[J]. Acta Electronica Sinica, 1990, (2): 44-49. DOI：

摘要

本文从单带双谷模型出发计算了GaAs/AlAs异质结量子阱中的隧道电流同外加电压之间的关系。研究了隧道电流同量子阱结构和电场间的关系以及隧道过程中的状态转换效应。在此基础上提出了利用异质结中的状态转换特性来制作X谷电子发生器的可能性。讨论了这种发生器在器件设计中的应用以及异质结限累管的初步设计。

Abstract

The tunneling current in GaAs/AlAs heterostructure as a function of an applied voltage is calculated by the one band two valleys model. The dependence of tunneling current on quantum well structure and electric field and the band mixing in tunneling are studied from which it is shown that this symmetry transformation could be used to develop the X valley electron generator. The application of this X valley electron generator in the design of devices and the developing of a heterostructure LSA diode are discussed.

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