Determination for Energy Gap Parameters of Semiconductors and Optical Transition Types by the Surface Photovoltage Method

Shen Qi-hua

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Determination for Energy Gap Parameters of Semiconductors and Optical Transition Types by the Surface Photovoltage Method

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- Determination for Energy Gap Parameters of Semiconductors and Optical Transition Types by the Surface Photovoltage Method
- Acta Electronica Sinica Issue 3, Pages: 1-7(1989)
- 作者机构：
  
  厦门大学
- 作者简介：
- 基金信息：
- DOI：
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- Published：1989
- 稿件说明：
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[1]沈(岂页)华.表面光电压法测定半导体光跃迁类型和带隙参数[J].电子学报,1989(03):1-7.

Shen Qi-hua. Determination for Energy Gap Parameters of Semiconductors and Optical Transition Types by the Surface Photovoltage Method[J]. Acta Electronica Sinica, 1989, (3): 1-7.
[1]沈(岂页)华.表面光电压法测定半导体光跃迁类型和带隙参数[J].电子学报,1989(03):1-7. DOI：

Shen Qi-hua. Determination for Energy Gap Parameters of Semiconductors and Optical Transition Types by the Surface Photovoltage Method[J]. Acta Electronica Sinica, 1989, (3): 1-7. DOI：

摘要

本文用表面光电压法测定了半导体材料的光跃迁类型和带隙参数

推导了有关的计算公式

测定了Ge、Si、GaAs、InP、GaP、AlGaAs

GaAsP等材料的禁带宽度和其他能隙等参数

计算结果与其他方法的测量结果基本一致。

Abstract

The energy gap parameters of semiconductors and the optical transition types are determined by the surface photovoltage method. The calculating expressions are derived. The forbidden band width and energy gaps are measured for Ge

Si GaAs

InP

GaP

AlGaAs and GaAsP

etc. The calculated results basically agree with experimental values measured by other methods.

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