An Investigation of Unsymmetrical MOS Source-coupled Pair

Qin Shi-cai; Chen Ke; Jia Xiang-luan

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An Investigation of Unsymmetrical MOS Source-coupled Pair

更新时间：2025-12-08

- An Investigation of Unsymmetrical MOS Source-coupled Pair
- Acta Electronica Sinica Issue 2, Pages: 116-120(1989)
- 作者机构：
  
  南开大学
- 作者简介：
- 基金信息：
- DOI：
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- Published：1989
- 稿件说明：
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[1]秦世才,陈克,贾香鸾.非对称MOS源耦对的研究[J].电子学报,1989(02):116-120.

Qin Shi-cai, Chen Ke, Jia Xiang-luan. An Investigation of Unsymmetrical MOS Source-coupled Pair[J]. Acta Electronica Sinica, 1989, (2): 116-120.
[1]秦世才,陈克,贾香鸾.非对称MOS源耦对的研究[J].电子学报,1989(02):116-120. DOI：

Qin Shi-cai, Chen Ke, Jia Xiang-luan. An Investigation of Unsymmetrical MOS Source-coupled Pair[J]. Acta Electronica Sinica, 1989, (2): 116-120. DOI：

摘要

本文分析了由两个沟道宽长比不同的MOS管组成的非对称源耦对的传输特性

并用这种非对称源耦对组成了实用的差动输入级。合理地选取失配因子θ

可以明显改善MOS差动输入级的动态输入范围和非线性。

Abstract

This paper analyzed transfer characteristics of the unsymmetrical source-coupled pair consisted of two MOSFETs with different W/L. A practical differential input stage has been yielded with this unsymmetrical source-coupled pair. If the unmatched factor θis selected reasonably

the input dynamic range and nonlinearity of the MOS differential stage can be improved significantly

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