Research on Emission Characteristic of Oxidized Ba Films

Bai He-Xiang; I iu Wei-yi; Liang Cui-guo

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Research on Emission Characteristic of Oxidized Ba Films

更新时间：2025-12-08

- Research on Emission Characteristic of Oxidized Ba Films
- Acta Electronica Sinica Issue 6, Pages: 38-42(1988)
- 作者机构：
  
  南开大学
- 作者简介：
- 基金信息：
- DOI：
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- Published：1988
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[1]白鹤翔,刘维一,梁翠果.Ba膜氧化过程中电子发射特性的研究[J].电子学报,1988(06):38-42.

Bai He-Xiang, I iu Wei-yi, Liang Cui-guo. Research on Emission Characteristic of Oxidized Ba Films[J]. Acta Electronica Sinica, 1988, (6): 38-42.
[1]白鹤翔,刘维一,梁翠果.Ba膜氧化过程中电子发射特性的研究[J].电子学报,1988(06):38-42. DOI：

Bai He-Xiang, I iu Wei-yi, Liang Cui-guo. Research on Emission Characteristic of Oxidized Ba Films[J]. Acta Electronica Sinica, 1988, (6): 38-42. DOI：

摘要

本文研究了Ba在Ni表面沉膜

测量Ba膜氧化过程中电子发射的I-V特性和不同膜厚对逸出功的影响。用Gauss分布求逸出功

在氧量适当时

出现逸出功最低值

此时电子发射为最大。可用氧的一分为二作用来解释

初步支持了动态表面发射中心的观点。

Abstract

Ba thin film on the Ni base is studied by means of AES. We have measured the Ⅰ-Ⅴ emission characteristic of oxidized Ba films and the influence of thinckness of Ba film on the work function. The results show that the work function drops to a minimun value at an appropriate amount of oxygen

during the oxidation of the Ba film. It can be explained by the role of dualistic property of oxygen and supports the point of view in the model of dynamical surface emission centers.

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