The Surface Potential of Ion Sensitive FET

Shao Bing-xian; Zhang Yong-xia

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The Surface Potential of Ion Sensitive FET

更新时间：2025-12-08

- The Surface Potential of Ion Sensitive FET
- Acta Electronica Sinica Issue 3, Pages: 60-64(1988)
- 作者机构：
  
  复旦大学
- 作者简介：
- 基金信息：
- DOI：
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- Published：1988
- 稿件说明：
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[1]邵丙铣,张永夏.离子敏场效应器件的界面电势[J].电子学报,1988(03):60-64.

Shao Bing-xian, Zhang Yong-xia. The Surface Potential of Ion Sensitive FET[J]. Acta Electronica Sinica, 1988, (3): 60-64.
[1]邵丙铣,张永夏.离子敏场效应器件的界面电势[J].电子学报,1988(03):60-64. DOI：

Shao Bing-xian, Zhang Yong-xia. The Surface Potential of Ion Sensitive FET[J]. Acta Electronica Sinica, 1988, (3): 60-64. DOI：

摘要

本文将氧化物的表面基模型同离子敏场效应器件的运用条件结合起来

进行了综合的理论与实验分析

证实了绝缘层表面同溶液间的界面行为对器件的敏感特性的影响起了主导作用

同时也不能忽略半导体材料与绝缘层之间界面行为的影响。

Abstract

Based on the site-binding model combined with the operating condition of ISFET

the theoretical and experimental results show that the interface behavior between insulator and solution dominate the performances of ion sensors. On the other hand

the effects of the interface between insulator and bulk semiconductor also should not be ignored.

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