The Study of Rapid Thermal Annealing of Si<sup>+</sup>-Implanted SI-GaAs

Qian He; Luo Jin-sheng

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The Study of Rapid Thermal Annealing of Si⁺-Implanted SI-GaAs

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- The Study of Rapid Thermal Annealing of Si⁺-Implanted SI-GaAs
- Acta Electronica Sinica Issue 4, Pages: 116-117(1988)
- 作者机构：
  
  西安交通大学电子工程系
- 作者简介：
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- Published：1988
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[1]钱鹤,罗晋生.Si~+注入高纯SI-GaAs快速退火[J].电子学报,1988(04):116-117.

Qian He, Luo Jin-sheng. The Study of Rapid Thermal Annealing of Si⁺-Implanted SI-GaAs[J]. Acta Electronica Sinica, 1988, (4): 116-117.
[1]钱鹤,罗晋生.Si~+注入高纯SI-GaAs快速退火[J].电子学报,1988(04):116-117. DOI：

Qian He, Luo Jin-sheng. The Study of Rapid Thermal Annealing of Si⁺-Implanted SI-GaAs[J]. Acta Electronica Sinica, 1988, (4): 116-117. DOI：

摘要

本文报导了用卤素灯作加热源的快速退火系统研究Si

注入高纯SI-GaAs的快速退火特性

得到了良好的注入激活层

并制成了6GHz下输出功率为0.5W

Abstract

: Rapid thermal annealing （RTA） of Si+-implanted undoped SI-GaAs has been studied by using the annealing system adoped a halogen lamp heater. Good electrical properties in activated layers have been achieved. GaAs MESFETs with 0.5w output power and associated gain of 3.5 dB at 6GHz are obtained by this method.

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The Study of Rapid Thermal Annealing of Si+-Implanted SI-GaAs

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The Study of Rapid Thermal Annealing of Si⁺-Implanted SI-GaAs