A Modified TLMM Thin Film Capacitor with Doped PbO<sub>2</sub>

Hu Nan-shan; Yao Guo-rong

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A Modified TLMM Thin Film Capacitor with Doped PbO₂

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- A Modified TLMM Thin Film Capacitor with Doped PbO₂
- Acta Electronica Sinica Issue 3, Pages: 7-10(1987)
- 作者机构：
  
  1. 上海电子通讯设备研究所
  2. 上海测试技术研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1987
- 稿件说明：
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[1]胡南山,姚国荣,愈志中,乔世忠.二氧化铅掺杂改性的TLMM薄膜电容器[J].电子学报,1987(03):7-10.

Hu Nan-shan, Yao Guo-rong. A Modified TLMM Thin Film Capacitor with Doped PbO₂[J]. Acta Electronica Sinica, 1987, (3): 7-10.
[1]胡南山,姚国荣,愈志中,乔世忠.二氧化铅掺杂改性的TLMM薄膜电容器[J].电子学报,1987(03):7-10. DOI：

Hu Nan-shan, Yao Guo-rong. A Modified TLMM Thin Film Capacitor with Doped PbO₂[J]. Acta Electronica Sinica, 1987, (3): 7-10. DOI：

摘要

用PbO

和MnO

首次在Ta

介质上复合掺杂半导体薄膜制成TLMM薄膜电容器。其特点是损耗低

温度系数偏移小。分析证实:当Pb:Mn:O为30:20:50时（原子数比）

电容器的损耗值最小为0.1～0.3％（1KHz）

温度系数为201.5±3.5ppm/℃（-40～+70℃）。

Abstract

TLMM thin film capacitors have firstly been manufactured by depositing PbO2 semiconducting film with MnO2 on Ta2O5 media. The characteristics of TLMM capacitor are low dissipation factor and small temperature coefficient shift. Auger spectra analysis shows that the least dissipation factor of capacitor is 0.1-0.3% （1kHz） and the temperature coefficient is 201.5±3.5ppm/℃（-40

0℃） when Pn: Mn: O = 30: 20: 50.

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A Modified TLMM Thin Film Capacitor with Doped PbO2

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A Modified TLMM Thin Film Capacitor with Doped PbO₂