Highly Stabilized GaAs FET Oscillator Using Dielectric ResonatorFeedback Circuits

Gu Mo-lin

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Highly Stabilized GaAs FET Oscillator Using Dielectric ResonatorFeedback Circuits

更新时间：2025-12-08

- Highly Stabilized GaAs FET Oscillator Using Dielectric ResonatorFeedback Circuits
- Acta Electronica Sinica Issue 4, Pages: 59-63(1988)
- 作者机构：
  
  南京电子技术研究所
- 作者简介：
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- Published：1988
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[1]顾墨琳.反馈型介质腔稳GaAs FET振荡器[J].电子学报,1988(04):59-63.

Gu Mo-lin. Highly Stabilized GaAs FET Oscillator Using Dielectric ResonatorFeedback Circuits[J]. Acta Electronica Sinica, 1988, (4): 59-63.
[1]顾墨琳.反馈型介质腔稳GaAs FET振荡器[J].电子学报,1988(04):59-63. DOI：

Gu Mo-lin. Highly Stabilized GaAs FET Oscillator Using Dielectric ResonatorFeedback Circuits[J]. Acta Electronica Sinica, 1988, (4): 59-63. DOI：

摘要

本文给出反馈型介质腔稳GaAs FET振荡器较严格的分析模型。导出振荡条件下FET的S参数与反馈电路参数间的关系式、振荡频率以及频率温度稳定度等的关系式。依此研制成两种X波段DRO

均获得良好的频率—温度特性。

Abstract

A model for high-precision analysis of the dielectric resonator feedback GaAs FET oscillator is given. Relations between the FET’s S-parameters and the feedback network parameters under oscillation condition

the oscillation frequency and frequency stability agains. temperature are derived. Two kinds of X-band DRO’s are developed. Both of them achieve high frequency stability over wide temperature range.

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