Calculations of DC Characteristics,Microwave and Noise Parameters of HEMT

Wei Ce-Jun

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Calculations of DC Characteristics,Microwave and Noise Parameters of HEMT

更新时间：2025-12-08

- Calculations of DC Characteristics,Microwave and Noise Parameters of HEMT
- Acta Electronica Sinica Issue 4, Pages: 15-23(1987)
- 作者机构：
  
  中国科学院半导体所
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1987
- 稿件说明：
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[1]魏策军.HEMT直流特性、微波和噪声参量的计算[J].电子学报,1987(04):15-23.

Wei Ce-Jun. Calculations of DC Characteristics,Microwave and Noise Parameters of HEMT[J]. Acta Electronica Sinica, 1987, (4): 15-23.
[1]魏策军.HEMT直流特性、微波和噪声参量的计算[J].电子学报,1987(04):15-23. DOI：

Wei Ce-Jun. Calculations of DC Characteristics,Microwave and Noise Parameters of HEMT[J]. Acta Electronica Sinica, 1987, (4): 15-23. DOI：

摘要

本文全面分析计算了HEMT器件的直流特性、微波和噪声参量。考虑了二维电子气密度与费米能级关系

得出修正后的电荷控制模型

并结合饱和速度特性计算了HEMT直流特性

同时讨论了负迁移率特性影响。本文第一次得出了HEMT电容特性与噪声参量分析表示式

计算Fukui噪声参数K

表明其值比GaAs MESFET小50～70％。

Abstract

A comprehensive analysis concerning the calculations of DC Characteristics

microwave and noise parameters of HEMT is given.A modified charge-control model taking account of the effects of ns

F dependence is utilized.The DC characteristics are calculated by using saturation model with a minor modification when negative mobility model involved.Analytical formulas for M-W behaviors and intrinsic noise parameters are derived

and the Fukui coefficient obtained KF is 50

0% smaller than that of GaAs MESFET.

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