Channel Base Transistors

Kang Bao-wei; Dong Li-min

您当前的位置：

首页 >

文章列表页 >

Channel Base Transistors

更新时间：2025-12-08

- Channel Base Transistors
- Acta Electronica Sinica Issue 5, Pages: 48-53(1987)
- 作者机构：
  
  1. 北京工业大学
  2. 辽宁大学
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1987
- 稿件说明：
移动端阅览
[1]亢宝位,董利民,仲玉林.沟道基区晶体管[J].电子学报,1987(05):48-53.

Kang Bao-wei, Dong Li-min. Channel Base Transistors[J]. Acta Electronica Sinica, 1987, (5): 48-53.
[1]亢宝位,董利民,仲玉林.沟道基区晶体管[J].电子学报,1987(05):48-53. DOI：

Kang Bao-wei, Dong Li-min. Channel Base Transistors[J]. Acta Electronica Sinica, 1987, (5): 48-53. DOI：

摘要

本文报导了一类新的晶体管-沟道基区晶体管（CBT）的实验研究和初步理论分析结果。这种晶体管在原理上同时含有双极晶体管和常闭型结型场效应晶体管的成份

其突出优点是电流增益随温度的变化和小电流区电流增益随电流的变化都远比双极晶体管小。

Abstract

The experiment and theorical analysis of a new type transistor-Channel Base Transistor （CBT） is presented. In principle

the bipolar content and the normally-off JF-ET content are contained simultaneously in CBT. Its important advantages are the small variations of current gain with temperature and small variations of current gain in small current region with emitter current compared with bipolars.

关键词

Keywords

references

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

No data

Related Author

No data

Related Institution

No data

⁰