An Exact Calculation of Perlormance Perameters of Microwave Low-Noise FET

Gan Zhong-min; Li Zhuang

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An Exact Calculation of Perlormance Perameters of Microwave Low-Noise FET

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- An Exact Calculation of Perlormance Perameters of Microwave Low-Noise FET
- Acta Electronica Sinica Issue 3, Pages: 75-81(1987)
- 作者机构：
  
  南京通信工程学院
- 作者简介：
- 基金信息：
- DOI：
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- Published：1987
- 稿件说明：
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[1]甘仲民,李壮.微波低噪声FET性能参数的精确计算[J].电子学报,1987(03):75-81.

Gan Zhong-min, Li Zhuang. An Exact Calculation of Perlormance Perameters of Microwave Low-Noise FET[J]. Acta Electronica Sinica, 1987, (3): 75-81.
[1]甘仲民,李壮.微波低噪声FET性能参数的精确计算[J].电子学报,1987(03):75-81. DOI：

Gan Zhong-min, Li Zhuang. An Exact Calculation of Perlormance Perameters of Microwave Low-Noise FET[J]. Acta Electronica Sinica, 1987, (3): 75-81. DOI：

摘要

本文利用GaAsFET的集总元件等效电路

统一处理了其噪声性能和相关增益的分析、稳定性判断和最佳源阻抗的综合。由计算机模拟所得结果表明

理论计算与实验结果甚为一致。

Abstract

In this paper

the analysis of noise perfomance and gain associated

the judgement of stability and the synthesis of optimum signal source impedance of GaAs FET are discussed by means of a lumped-element equivalent circuit. The results show that there is a sound agreement between the theortical computation and the experimental data.

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