In0.<sub>53</sub>Gao.<sub>47</sub>As Hall Device with High Sensitivity

Zheng Yi-yang; Zhang Jin-chang; Liu Yan-fang; Peng Shao-jin; Lu Wen-hong

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In0.₅₃Gao.₄₇As Hall Device with High Sensitivity

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- In0.₅₃Gao.₄₇As Hall Device with High Sensitivity
- Acta Electronica Sinica Issue 1, Pages: 36-40(1987)
- 作者机构：
  
  1. 中国科学院半导体研究所
  2. 河北省宣化七○一厂
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1987
- 稿件说明：
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[1]郑一阳,张进昌,刘衍芳,彭少近,卢文宏,沈桂贤,张颖竹,苏桂祥,贾奎友.高灵敏度的In_(0.53)Ga_(0.47)As Hall器件[J].电子学报,1987(01):36-40.

Zheng Yi-yang, Zhang Jin-chang, Liu Yan-fang, et al. In0.₅₃Gao.₄₇As Hall Device with High Sensitivity[J]. Acta Electronica Sinica, 1987, (1): 36-40.
[1]郑一阳,张进昌,刘衍芳,彭少近,卢文宏,沈桂贤,张颖竹,苏桂祥,贾奎友.高灵敏度的In_(0.53)Ga_(0.47)As Hall器件[J].电子学报,1987(01):36-40. DOI：

Zheng Yi-yang, Zhang Jin-chang, Liu Yan-fang, et al. In0.₅₃Gao.₄₇As Hall Device with High Sensitivity[J]. Acta Electronica Sinica, 1987, (1): 36-40. DOI：

摘要

本文首次报导了用InGaAs材料制备的Hall器件。该器件具有输出灵敏度高（比GaAs高50％）

功耗小

欧姆接触好以及在较宽的温区（4K到480K）内工作等特点。在4K温度时

可以工作到80kG以上的强磁场。

Abstract

InGaAs Hall devices were firstly produced by planar technology. In the case of same carrier concentration

the sensitivity of InGaAs has increased by fifty percent as compared with GaAs Hall devices. Because InGaAs has a sufficiently high carrier mobility

it has small temperature dependence of its characteristics at a wide temperature range between -50 and 200℃

although it has a narrower bandgap. It has lower contact potential barrier. Magnetic flux densities of InGaAs Hall device were determined up to 80 kG at 4.2 K.

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In0.53Gao.47As Hall Device with High Sensitivity

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In0.₅₃Gao.₄₇As Hall Device with High Sensitivity